13651969369
當前位置：首頁 > 產(chǎn)品中心 > 二維材料 > 異質結 > 硅基的CVD石墨烯與氮化硼異質結構
簡要描述：CVD Graphene/CVD Hexagonal Boron Nitride heterostructure on SiO2/Si waferProperties of Graphene/h-BN Film:Single Layer Graphene Film on Single Layer h-BN Film transferred onto 285 nm (p-doped) SiO
更新時間：2024-06-03產(chǎn)品型號： 廠商性質：生產(chǎn)廠家訪 問 量：896詳細介紹
CVD Graphene/CVD Hexagonal Boron Nitride heterostructure on SiO2/Si wafer
Properties of Graphene/h-BN Film:
Single Layer Graphene Film on Single Layer h-BN Film transferred onto 285 nm (p-doped) SiO2/Si wafer
Size: 1cmx1cm; 4 pack
The thickness and quality of each film is controlled by Raman Spectroscopy
The coverage of this product is about 98%
The films are continuous, with minor holes and organic residues
High Crystalline Quality
The graphene film is premodominantly single layer (more than 95%) with occasional small multilayer islands (less than 5% bi-layers)
Sheet Resistance: 430-800 Ω/square
Properties of Silicon/Silicon Dioxide Wafers:
Oxide Thickness: 285 nm
Oxide Thickness: 285 nm
Color: Violet
Wafer thickness: 525 micron
Resistivity: 0.001-0.005 ohm-cm
Type/Dopant: P/Boron
Orientation: <100>
Front Surface: Polished
Back Surface: Etched
產(chǎn)品咨詢
聯(lián)系人：陳谷一
地址：江蘇省泰州市鳳凰西路168號
郵箱：taizhou@sunano.com.cn
電話：021-56830191掃一掃以下二維碼了解更多信息
銷售微信咨詢
網(wǎng)站二維碼
歡迎來到