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轉(zhuǎn)換發(fā)光納米粒子主要是由氧化物、氟化物、鹵氧化物等基質(zhì)摻雜三價稀土離子（如Er3+ , Eu3+ , Yb3+ , Tm3+ , Ho3+ 等）得到，通過多光子機制將紅外光轉(zhuǎn)換成可見光，為反Stokes發(fā)光；具有發(fā)射譜線窄，壽命長，發(fā)光穩(wěn)定性好，不易受環(huán)境影響，生物毒性低，化學穩(wěn)定性高等優(yōu)點；廣泛應(yīng)用于生物熒光標記和成像、激光器、太陽能電池、防偽技術(shù)等領(lǐng)域。 成分：NaYF4(Er/Tm,

Our TiS2 crystals are stabilized in 1T ohase (semimetallic phase). They are grown using two different techniques through chemical vapor transport (CVT) or flux zone growth (see description of these tw

Single crystal ReS? (Rhenium disulfide) crystals are developed at our facilities using chemical vapor transport or flux zone technique methods after 9 years of growth optimization to ensure anisotropi

14 years of growth optimization in chemical vapor transport (CVT) as well as flux growth lead to our flawless WS2 crystals: Our large size (~1cm in size) vdW WS2 crystals are treated as gold standards

Hafnium disulfide (HfS?) is an indirect gap layered semiconductor in the bulk and becomes direct gap semiconductor in monolayer form.

Large size hexagonal phase GaTe (Gallium telluride) crystals have been developed at our facilities using three different growth techniques, namely Bridgman growth, chemical vapor transport (CVT)